Sources of static power dissipation
March 14, 2024
- Static dissipation due to
- Subthreshold leakage through OFF transistors.
- Gate leakage through gate dielectric.
- Junction leakage from source/drain diffusions.
- Contention current in ratioed circuits.
2. Gate leakage:
- Gate leakage occurs when carriers tunnel through a thin gate dielectric, when a voltage is applied across the gate (e.g., when the gate is ON).
- Gate leakage is a strong function of the dielectric thickness.
3. Junction leakage:
- Junction leakage occurs when a source or drain diffusion region is at a different potential from the substrate.
- Leakage of reverse-biased diodes is usually negligible.
4. Contention current:
- Static CMOS circuits have no contention current. However, certain alternative circuits inherently draw current even while quiescent.
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